国重学术报告：Electrical spin injection and detection in molybdenum disulfide multilayer channel
Speaker: Prof. Yuan Lu ( Institute Jean Lamour, University of Lorraine)
Time: December 29, 2016 10:00
报告摘要：Molybdenum disulfide (MoS2) has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating electron spin transport through a semiconducting MoS2 channel is challenging. Here we evidence the electrical spin injection and detection in a multilayer MoS2 semiconducting channel with a two-terminal spin-valve measurement. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450 nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that keeping a good balance between the interface resistance and channel resistance plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with in-plan spin injection. The underestimated long spin diffusion length (~235nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
报告人简介：Yuan LU is a research staff working in CNRS in France since 2008. He received his B.S. degree from Tsinghua University in 1999, and his Ph.D degree in material science from Institute of Semiconductor (CAS) in 2004. Then he worked as a post-doc fellow in University of Rennes and Unite Mixté CNRS/THALES in France from 2004 to 2007 before obtaining his permanent position in CNRS in 2007. In 2010, he worked as a visiting researcher in University of Maryland (USA). The research aeras of Dr. Lu focus on magnetic tunnel junctions and spin-injection and detection in semiconductors. He has more than 50 publications ininternational journals (1 Adv.Mat., 3 Phys.Rev.Lett., 13 Appl.Phys.Lett., 4 Phys.Rev.B) and served as referee for journals of Adv.Mat., Appl.Phys.Letts, J.Appl.Phys., Phys.Status Solidi and Surface and Coating Technology.